Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
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https://doi.org/10.1109/LED.2013.2248114Metadata
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Gu, Jiangjiang J., Xinwei Wang, Heng Wu, Roy G. Gordon, and Peide D. Ye. 2013. Variability improvement by interface passivation and EOT scaling of InGaAs nanowire MOSFETs. IEEE Electron Device Letters 34(5): 608-610.Abstract
High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (\(L_{ch}\)) down to 20 nm are fabricated by integrating a higher-k \(LaAlO_3\)-based gate-stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5 nm) \(Al_2O_3\) interfacial layer between the higher k \(LaAlO_3\) and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nm \(L_{ch}\) for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.Terms of Use
This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAPCitable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:11169839
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